Technology
- Electrical and structural properties of PHEMT heterostructures based on AlGaAs/InGaAs/AlGaAs and δ-doped on two sides
I. S. Vasil
Semiconductors, 2008, Volume 42, Number 9, 10841091
- Methods of controlling the emission wavelength in InAs/GaAsN/InGaAsN heterostructures on GaAs substrates
V. V. Mamutin, A. Yu. Egorov, N. V. Kryzhanovskaya, V. S. Mikhrin, A. M. Nadtochy and E. V. Pirogov
Semiconductors, 2008, Volume 42, Number 7, 08050812
- Electroreflectance spectra of InGaN/AlGaN/GaN quantum-well heterostructures
L. P. Avakyants, M. L. Badgutdinov, P. Yu. Bokov, A. V. Chervyakov, S. S. Shirokov, A. E. Yunovich, A. A. Bogdanov, E. D. Vasil
Semiconductors, 2007, Volume 41, Number 9, 10601066
- High-power laser diodes with an emission wavelength of 835 nm on the basis of various types of heterostructures
A. V. Murashova, D. A. Vinokurov, N. A. Pikhtin, S. O. Slipchenko, V. V. Shamakhov, V. V. Vasilyeva, V. A. Kapitonov, A. Yu. Leshko, A. V. Lyutetskiy, T. A. Nalet, D. N. Nikolaev, A. L. Stankevich, N. V. Fetisova, I. S. Tarasov, Y. S. Kim, D. H. Kang and C. Y. Lee
Semiconductors, 2006, Volume 42, Number 7, 08620867
- High-power lasers (λ = 940
D. A. Vinokurov, A. L. Stankevich, V. V. Shamakhov, V. A. Kapitonov, A. Yu. Leshko, A. V. Lyutetskiĭ, D. N. Nikolaev, N. A. Pikhtin, N. A. Rudova, Z. N. Sokolova, S. O. Slipchenko, M. A. Khomylev and I. S. Tarasov
Semiconductors, 2006, Volume 40, Number 6, 07450748
- Luminescence spectra, efficiency, and color characteristics of white-light-emitting diodes based on p-n InGaN/GaN heterostructures with phosphor coatings
M. L. Badgutdinov, E. V. Korobov, F. A. Luk
Semiconductors, 2006, Volume 40, Number 6, 07390744
- The optical properties of heterostructures with quantum-confined InGaAsN layers on a GaAs substrate and emitting at 1.3
N. V. Kryzhanovskaya, A. Yu. Egorov, V. V. Mamutin, N. K. Polyakov, A. F. Tsatsul
Semiconductors, 2005, Volume 39, Number 6, 07030708
- Mid-infrared (λ=2.775
S. V. Ivanov, K. D. Moiseev, V. A. Kaigorodov, V. A. Solov
Semiconductors, 2003, Volume 37, Number 6, 07360739
- Room-temperature 1.5
A. A. Tonkikh, G. E. Tsyrlin, V. G. Talalaev, B. V. Novikov, V. A. Egorov, N. K. Polyakov, Yu. B. Samsonenko, V. M. Ustinov, N. D. Zakharov and P. Werner
Semiconductors, 2003, Volume 37, Number 12, 14061410
- Effect of carrier localization on the optical properties of MBE-grown GaAsN/GaAs heterostructures
B. V. Volovik, N. V. Kryzhanovskaya, D. S. Sizov, A. R. Kovsh, A. F. Tsatsul
Semiconductors, 2002, Volume 36, Number 9, 09971000
- Arrays of 128×128 photodetectors based on HgCdTe layers and multilayer heterostructures with GaAs/AlGaAs quantum wells
V. N. Ovsyuk, Yu. G. Sidorov, V. V. Vasil
Semiconductors, 2001, Volume 35, Number 9, 11101116
- Type II broken-gap InAs/GaIn0.17As0.22Sb heterostructures with abrupt planar interface
K. D. Moiseev, A. A. Sitnikova, N. N. Faleev and Yu. P. Yakovlev
Semiconductors, 2000, Volume 34, Number 12, 13811385
- InGaAs/InP heterostructures with strained quantum wells and quantum dots (λ=1.5
Z. N. Sokolova, D. A. Vinokurov, I. S. Tarasov, N. A. Gun
Semiconductors, 1999, Volume 33, Number 9, 10071009
- Molecular beam epitaxy of alternating-strain ZnSe-based multilayer heterostructures for blue-green lasers
S. V. Ivanov, A. A. Toropov, S. V. Sorokin, T. V. Shubina, N. D. Il
Semiconductors, 1998, Volume 32, Number 10, 11371140
- Polarization of in-plane photoluminescence from InAs/Ga(In)As quantum-well layers grown by metallorganic vapor-phase epitaxy
V. Ya. Aleshkin, B. N. Zvonkov, I. G. Malkina, Yu. N. Saf
Semiconductors, 1998, Volume 32, Number 10, 11191124
- Excitonic effects in the photoconductivity of quantum-well GaxIn1−xAs/InP structures
M. F. Panov and A. N. Pikhtin
Semiconductors, 1997, Volume 31, Number 7, 07190721
- Band Structure and Oscillatory Electron-Phonon Coupling of Pb Thin Films Determined by Atomic-Layer-Resolved Quantum-Well States
Yan-Feng Zhang, Jin-Feng Jia, Tie-Zhu Han, Zhe Tang, Quan-Tong Shen, Yang Guo, Z. Q. Qiu, and Qi-Kun Xue
Phys. Rev. Lett. 95, 096802 (2005)
- Self-organization of one-dimensional Au nanowires on a surface carbide and lateral electron quantization
A. Varykhalov, O. Rader, and W. Gudat
Phys. Rev. B 72, 241404(R) (2005)
- Experimental and ab initio study of the structural and electronic properties of subnanometer thick Ag films on Pd(111)
V. Mikšić Trontl, I. Pletikosić, M. Milun, P. Pervan, P. Lazić, D. Šokčević, and R. Brako
Phys. Rev. B 72, 235418 (2005)
- Structural, electrical, and magneto-optical characterization of paramagnetic GaMnAs quantum wells
M. Poggio, R. C. Myers, N. P. Stern, A. C. Gossard, and D. D. Awschalom
Phys. Rev. B 72, 235313 (2005)
- Optical and electronic properties in (In0.53Ga0.47As)1−z∕(In0.52Al0.48As)z digital alloys
J. T. Woo, J. H. Kim, T. W. Kim, J. D. Song, and Y. J. Park
Phys. Rev. B 72, 205320 (2005)
- Multivalley transport and the integer quantum Hall effect in a PbTe quantum well
V. A. Chitta, W. Desrat, D. K. Maude, B. A. Piot, N. F. Oliveira, Jr., P. H. O. Rappl, A. Y. Ueta, and E. Abramof
Phys. Rev. B 72, 195326 (2005)