Devices
- Electroluminescence spectra of ultraviolet light-emitting diodes based on p - n -heterostructures coated with phosphors
N. A. Gal
Semiconductors, 2007, Volume 41, Number 9, 11261131
- High-power laser diodes with an emission wavelength of 835 nm on the basis of various types of heterostructures
A. V. Murashova, D. A. Vinokurov, N. A. Pikhtin, S. O. Slipchenko, V. V. Shamakhov, V. V. Vasilyeva, V. A. Kapitonov, A. Yu. Leshko, A. V. Lyutetskiy, T. A. Nalet, D. N. Nikolaev, A. L. Stankevich, N. V. Fetisova, I. S. Tarasov, Y. S. Kim, D. H. Kang and C. Y. Lee
Semiconductors, 2006, Volume 42, Number 7, 08620867
- Luminescence spectra, efficiency, and color characteristics of white-light-emitting diodes based on p-n InGaN/GaN heterostructures with phosphor coatings
M. L. Badgutdinov, E. V. Korobov, F. A. Luk
Semiconductors, 2006, Volume 40, Number 6, 07390744
- Resonance transfer of charge carriers in Si/CaF2 periodic nanostructures via trap states in insulator
Yu. A. Berashevich, A. L. Danilyuk and V. E. Borisenko
Semiconductors, 2002, Volume 36, Number 6, 06790684
- Luminescence spectra and efficiency of GaN-based quantum-well heterostructure light emitting diodes: Current and voltage dependence
V. E. Kudryashov, S. S. Mamakin, A. N. Turkin, A. É. Yunovich, A. N. Kovalev and F. I. Manyakhin
Semiconductors, 2001, Volume 35, Number 7, 08270834
- Luminescence spectra of blue and green light-emitting diodes based on multilayer InGaN/AlGaN/GaN heterostructures with quantum wells
K. G. Zolina, V. E. Kudryashov, A. N. Turkin and A. É. Yunovich
Semiconductors, 1997, Volume 31, Number 9, 09010907
- Wurtzite structure effects on spin splitting in GaN∕AlN quantum wells
Ikai Lo, W. T. Wang, M. H. Gau, S. F. Tsay, and J. C. Chiang
Phys. Rev. B 72, 245329 (2005)