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Characteristics and Properties

Electrical properties of Indium Antimonide (InSb)

Electrical properties

Basic Parameters
Mobility and Hall Effect
Transport Properties in High Electric Fields
Impact Ionization
Recombination Parameters

Basic Parameters

Breakdown field	≈103 V cm-1
Mobility Electrons	≤7.7·104 cm2V-1s-1
Mobility Holes	≤850 cm2V-1s-1
Diffusion coefficient Electrons	≤2·103 cm2s-1
Diffusion coefficient Holes	≤22 cm2s-1
Electron thermal velocity	9.8·105 m s-1
Hole thermal velocity	1.8·105 m s-1

Mobility and Hall Effect

	Electron Hall mobility versus temperature for different doping levels and different compensation ratios Curve Nd (cm-3) θ = Na/Nd 1. 3.85·1014 0.5 2. 8.5·1014 0.88 3. 9.5·1014 0.98 4. 1.35·1015 0.99 (Yaremenko et al. [1973]).
	Electron mobility versus temperature (high temperatures). Solid line is theoretical calculation for electron-drift mobility. Experimental data are Hall mobilities. (Rode [1971]).

For pure n-InSb at T ≥ 200K:
µ_nH≈7.7·10⁴(T/300)^-1.66 (cm² V^-1 s^-1).

	Electron mobility versus electron concentration. T = 300 K (Litwin-Staszewska et al. [1981]).
	Electron mobility versus electron concentration. T = 77 K (Litwin-Staszewska et al. [1981]).
	The electron Hall factor versus carrier concentration. T = 77 K (Baranskii and Gorodnichii [1969]).

Maximal electron mobility for pure n-InSb
77 K	1.2·106 cm2V-1s-1
300 K	7.7·104 cm2V-1s-1
Maximal electron mobility for InSb grown on GaAs substrate
77K	1.5·105 cm2V-1s-1 (no= 2.2·1015 cm-3)
300 K	7.0·104 cm2V-1s-1 (no= 2.0·1016 cm-3)
Maximal electron mobility for InSb grown on InP substrate
77 K	1.1·105 cm2V-1s-1
300 K	7.0·104 cm2V-1s-1

Hole Hall mobility versus temperature for different hole concentrations. po (cm-3): 1. 8·1014; 2. 3.15·1018; 3. 2.5·1019; (Zimpel et al. [1989]) and (Filipchenko and Bolshakov [1976]).

For pure p-InSb at T > 60K:
µ_pH≈850(T/300)^-1.8 (cm²V^-1s^-1)

	Hall mobility versus hole concentrations: 1. 77 K (Filipchenko and Bolshakov [1976]); 2. 290K (Wiley [1975]).
	The hole Hall factor versus carrier concentration, 77 K (Baranskii and Gorodnichii [1969]).

Transport Properties in High Electric Fields

	Field dependence of the electron drift velocity, 77 K. Solid lines is the Monte Carlo calculation. Points are experimental data. (Asauskas et al. [1980]).
	Field dependence of the electron drift velocity, 77 K. Solid lines is the Monte Carlo calculation. Points are experimental data. (Neukermans and Kino [1973]).
	Fraction of electrons in the L-valley as a function of electric field F, 77K (Asauskas et al. [1980]).
	Frequency dependence of the efficiency in LSA mode Fo = F + F1sin(2π·ft): Fo= 2.5 kV cm-1 (Prokhorov et al. [1977]).

Impact Ionization

The dependence of generation rate for electrons gn versus electric field F, 300 K (Vorob'ev et al. [1983]).

For 300 K, for 30 V/cm < F < 300 V/cm:

g_n(F) = 126·F²exp(F/160) (s^-1),

where F is in V cm^-1.

	The dependence of generation rate for electrons gn versus electric field F, 77 K (Krotkus and Dobrovolskis [1988]) and (Vorob'ev et al. [1988]).
	The dependence of ionization rates for electrons αi versus the electric field F, T=78 K (Gavrushko et al. [1978]).
	The dependence of generation rate for holes gp versus the electric field F, T =77K (Adomaitis et al. [1985]).

Recombination Parameters

For pure InSb at T≥250K lifetime of carrier (electrons and holes) is determined by Auger recombination:
τ_n = τ_p ≈1/C n_i²,
where C≈5·10^-26 cm^-6 s^-1 is the Auger coefficient.
n_i is the intrinsic carrier concentration.

For T = 300 K	τn = τp≈5·10-8 s
For T = 77K
n-type: the lifetime of holes	τp ~ 10-6 s
p-type: the lifetime of electrons	τn ~ 10-10 s

	Temperature dependence of surface recombination velocity for p-InSb. (Euthymiou et al. [1981]).
	Temperature dependence of surface recombination velocity for n-InSb. (Skountzous and Euthymiou [1976]).

Radiative recombination coefficient	~5·10-11 cm3s-1
Auger coefficient	~5·10-26 cm6s-1

 

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