Band structure and carrier concentration of Indium Antimonide (InSb)
Band structure and carrier concentration
Basic ParametersTemperature Dependences
Dependence of the Energy Gap on Hydrostatic Pressure
Effective Masses
Donors and Acceptors
Basic Parameters
| Energy gap | 0.17 eV |
| Energy separation (EΓL) between Γ and L valleys | 0.51 eV |
| Energy separation (EΓX) between Γ and X valleys | 0.83 eV |
| Energy spin-orbital splitting | 0.80 eV |
| Intrinsic carrier concentration | 2·1016 cm-3 |
| Intrinsic resistivity | 4·10-3 Ω·cm |
| Effective conduction band density of states | 4.2·1016 cm-3 |
| Effective valence band density of states | 7.3·1018 cm-3 |
 |
Band structure and carrier concentration of InSb 300 K Eg = 0.17 eV EL = 0.68 eV EX= 1.0 eV Eso = 0.8 eV |
Temperature Dependences
Temperature dependence of the energy gap
Eg = 0.24 - 6·10-4·T2/(T+500) (eV),where T is temperatures in degrees K (0 < T < 300).
(Litter and Seiger [1985]).
Effective density of states in the conduction band
Nc~ 8·1012·T3/2 (cm-3)Effective density of states in the valence band
Nn ~ 1.4·1015·T3/2 (cm-3).Intrinsic Carrier Concentration
ni = (Nc·Nν)1/2exp(-Eg/(2kbT))For 200K < T < 800 K ni = 2.9·1011(2400 - T)3/4 ·(1+2.7·10-4·T)·T3/2 ·exp(-(0.129 - 1.5·10-4T)/(2kbT)) (cm-3)
(Oszwaldowski and Zimpel [1988]).
 |
The temperature dependences of the intrinsic carrier concentration. |
 |
Fermi level versus temperature for different concentrations of shallow donors and acceptors. |
Dependences on Hydrostatic Pressure
Eg≈Eg(0) + 13.7·10-3P - 3.6·10-5P2 (eV)EL≈EL(0) + 4.7·10-3P - 1.1·10-5P2 (eV)
EX≈EX(0) - 3.5·10-3P + 0.64·10-5P2 (eV),
where P is pressure in kbar.
(Van Camp et al. [1990]).
Effective Masses
| Electrons: | |
| For Γ-valley | mΓ = 0.0.14mo |
| Non-parabolicity: E(1+αE) = h2k2/(2mΓ) |
α = 4.1 (eV-1) |
| In the L-valley effective mass of density of states | mL=0.25mo |
 |
Electron effective mass versus electron concentration (Zawadzki [1974]). |
| Holes: | mh = 0.43mo |
Heavy |
mh = 0.43mo |
Light |
mlp = 0.015mo |
Split-off band |
mso = 0.19mo |
Effective mass of density of states |
mv = 0.43mo |
Donors and Acceptors
Ionization energies of shallow donors ~0.0007 (eV):
Se, S, Te.Ionization energies of shallow acceptors (eV):
| Cd | Zn | Cr | Cu° | Cu- |
| 0.01 | 0.01 | 0.07 | 0.028 | 0.056 |