NSM Archive - Indium Nitride (InN) - Basic Electrical parameters
Electrical properties
Basic Parameter
Wurtzite crystal structure
| Mobility electrons | ≤3200 cm2 V-1 s-1 | 300 K |
| Diffusion coefficient electrons | <80 cm2 s-1 | 300 K |
| Electron thermal velocity | 3.4 x 105 m s-1 | 300 K |
| Hole thermal velocity | 9.0 x 104 m s-1 | 300 K |
| Radiative recombination coefficient | 2.0 x 10-10 cm3 s-1. | 300 K | Zhou et al. (1995) |
| Conductivity σ | 2 ÷3 Ω-1 cm-1 | 300 K ; temperature coefficient of resistivity 3.7·10-3 K-1 at 200...300K for pressed powder |
Juza et al. (1956); Hovel & Cuomo (1972); Trainor & Rose (1974) |
| Mobility electrons μn | 250(50) cm2 V-1 s-1 | 300 K ; see also Electron mobility vs. temperature | Hovel & Cuomo (1972) |
| 20 cm2 V-1 s-1 | Trainor & Rose (1974) | ||
| 35 ... 50 cm2 V-1 s-1 | Marasina et al. (1977) |