NSM Archive - Optical properties of Germanium (Ge)

Ge - Germanium

Optical properties

Infrared refractive index n4.00 (300K )
Radiative recombination coefficient6.4·10-14 cm3/s


Refractive index n versus wavelength at four different temperatures.
(Icenogle et al. [1976]).
Refractive index n versus photon energy. T = 300 K.
(Philipp and Taft [1959]).
Reflectance versus photon energy. T = 300 K.
(Cordona et al. [1967]).
Low-level absorption spectrum of high purity Ge at various temperatures.
(Macfarlane et al. [1957]).
The absorption edge at three different temperatures
(Seysyan et al. [1968]).
The absorption coefficient versus photon energy. T = 300 K.
(Phillipp and Taft [1959]).
The absorption coefficient at different donor (As) concentrations. T = 300 K
(Pankove and Aigrain [1962]).
Intrinsic absorption edges at different donor (As) concentrations at 300 K obtained after substracting the free carrier absorption from the measured values.
(Pankove and Aigrain [1962]).
T = 293 K.The absorption coefficient at different acceptor (Ga) concentrations.
(Bagaev et al. [1962]).
Intrinsic absorption edge at different doping (Ga) level T = 293 K.
(Bagaev et al. [1962]).
Free carrier absorption versus wavelength at different doping levels. n-Ge. T = 300 K.
Conduction electron concentration no:
    1 -- 8.0 x 1017 cm-3;
    2 -- 4.8 x 1018 cm-3;
    3 -- 1.35 x 1019 cm-3;
  4 -- 1.8 x 1019 cm-3;
    5 -- 3.6 x 1019 cm-3;
Fistul (1967)
Free carrier absorption versus photon energy at different doping levels. p-Ge. T = 300 K.
Free hole concentration po:
    1 -- 7.3 x 1015 cm-3;
    2 -- 1.6 x 1016 cm-3;
    3 -- 6.0 x 1016 cm-3;
  4 -- 1.9 x 1017 cm-3;
    5 -- 1.2 x 1018 cm-3;
    6 -- 1.0 x 1019 cm-3.
Ukhanov (1966), Vasilyeva et al (1967)

Two-photon absorption coefficient β

λτp, nsβ×1011, m W-1Ref.
2.363050±0.3(Zubov et al. [1971]).
2.6-3.11002500 (?)(Wenzel et al. [1973]).
 480340(Gibson et al. [1976]).