Optical properties of Gallium Antimonide (GaSb)

GaSb - Gallium Antimonide

Optical properties

Index of refraction 3.8
Radiative recombination coefficient ~ 10-10 cm3s-1

Infrared refractive index
n = k1/2≈3.71·(1+8.25·10-5T)

Long-wave TO phonon energy hνTO = 27.78 meV (300 K).
Long-wave LO phonon energy hνLO = 28.89 meV (300 K).

Refractive index n versus photon energy, 300 K
(Adachi (1989)).
Reflectivity versus photon energy, 300 K
(Cardona (1961)).
Intrinsic absorption coefficient near the intrinsic absorption edge in pure p-type samples.
T(K): 1. 300, 2. 77, 3. 4.2
(Becker et al. (1961)).
Intrinsic absorption edge in p-type GaSb.
Na = 3·1019 cm-3;
T(K): 1. 215; 2. 140; 3. 77
(Iluridze et al. (1987)).
Intrinsic absorption edge at 77 K for different doping levels, p-GaSb.
Na(cm-3): 1. 2.9·1017; 2. 5·1018; 3. 1.8·1019; 4. 3·1019
(Iluridze et al. (1987)).
A ground state Rydberg energy RX1 = 2.8 meV.
The absorption coefficient versus photon energy, T=300 K
(Adachi (1989)).
The impurity absorption at low photon energies, T=80 K
Undoped sample (p = 2.4·1017 cm-3 at 300 K)
Te added (p = 7.5·1016 cm-3)
Se added (p = 4.1·1016 cm-3)
(Johnson and Fan (1965)).