Basic Parameters of Gallium Phosphide (GaP)
Basic Parameters at 300 K
| Crystal structure | Zinc Blende |
| Group of symmetry | Td2-F43m |
| Number of atoms in 1 cm3 | 4.94·1022 |
| Auger recombination coefficient | 10-30 cm6/s |
| Debye temperature | 445 K |
| Density | 4.14 g cm-3 |
| Dielectric constant (static) | 11.1 |
| Dielectric constant (high frequency) | 9.11 |
| Effective electron mass ml | 1.12mo |
| Effective electron mass mt | 0.22mo |
| Effective hole masses mh | 0.79mo |
| Effective hole masses mlp | 0.14mo |
| Electron affinity | 3.8 eV |
| Lattice constant | 5.4505 A |
| Optical phonon energy | 0.051 |