New Semiconductor Materials. Biology systems.
Characteristics and Properties

Reference for Gallium Nitride (GaN)

References:

• Akasaki, I., H. Amano, in Properties of Group III Nitrides, ed. Edgar J.H., EMIS Datareviews Series, N11, (1994), an INSPEC publication, 30-34.
• Akasaki, I., H. Amano, J. Electrochem. Soc. 141, 8 (1994b), 2266-2271.
• Albrecht, J.D., R.P. Wang, P.P. Ruden, M. Farahmand, K.F. Brennan, J. Appl. Phys. 83(9) (1998), 4777-4781.
• Ambacher, O., W. Rieger, P. Ansmann, H. Angerer, T.D. Moustakas, M. Stutzman, Electron transport characteristics of GaN for high temperature device modeling, Sol. State Commun. 97(5) (1996), 365-370.
• As, D.J., D. Schikora, A. Greiner, M. Lubbers, J. Mimkes, K. Lischka, p- and n-type cubic GaN epilayers on GaAs, Phys. Rev. A 54(16) (1996), R11118-R11121.
• Barker, A.S., Ilegems, M., Infrared Lattice Vibrations and Free-Electron Dispersion in GaN, Phys. Rev. B 7 (1973) 743.
• Barin, I., O. Knacke, O. Kubaschewski, Thermochemical Properties of Inorganic Substances, Springer-Verlag, Berlin, 1977.
• Bhapkar, U.V, M.S. Shur, Monte Carlo calculation of velocity-field characteristics of wurtzite GaN, J. Appl. Phys. 82, 4 (1997), 1649-1655
• Bloom, S., Harbeke G., Meier E., Ortenburger I.B., Phys. Stat. Solidi 66 (1974), 161-168.
• Boguslawski, P., E.L. Briggs, J. Bernholc, Native defects in gallium nitride, Phys. Rev. 51, 23 (1995), 17255-17258.
• Boguslawski, P., J. Bemholc, Acta Phys. Pol A 90 (1996), 735.
• Bougrov V., Levinshtein M.E., Rumyantsev S.L., Zubrilov A., in Properties of Advanced SemiconductorMaterials GaN, AlN, InN, BN, SiC, SiGe . Eds. Levinshtein M.E., Rumyantsev S.L., Shur M.S., John Wiley & Sons, Inc., New York, 2001, 1-30.
• Bykhovski, A.D., B.L. Gelmont, M.S. Shur, Elastic strain relaxation and piezoeffect in GaN-AlN, GaN-AlGaN and GaN-InGaN superlattices, J. Appl. Phys. 81(9) (1997), 6332-6338.
• Chernyak, L., A. Osinsky, H. Temkin, J.W. Yang, Q. Chen, M.A. Khan, Electron beam induced current measurements of minority carrier diffusion length in gallium nitride, Appl. Phys. Lett. 69(17) (1996), 2531-2533.
• Chin, V.W.L, T.L. Tansley, T. Osotchan, Electron mobilities in gallium, indium, and aluminum nitrides, J. Appl. Phys. 75(11) (1994), 7365-7372.
• Chow, T.P, Ghezzo. SiC power devices. in III-Nitride, SiC, and Diamond Materials for Electronic Devices. Eds. Gaskill D.K, Brandt C.D. and Nemanich R.J., Material Research Society Symposium Proceedings, Pittsburgh, PA. 423 (1996), 69-73.
• Crouch, R.K., Debnam, W.J., Fripp, A.L., J. Mater. Sci. 13 (1978) 2358.
• Cunningham, R.D., R.W. Brander, N.D. Knee, D.K. Wickenden, J. Lumin. 5 (1972), 21-31.
• Ding, S.A., S.R. Barman, K. Horn, H. Yang, B.B. Yang, O. Brandt, K. Ploog, Valence band discontinuity at a cubic GaN/GaAs heterojunction measured by synchrotron-radiation photoemission spectroscopy, Appl. Phys. Lett. 70(18) (1997), 2407-2409.
• Dingle, R., D.D. Sell, S.E. Stokowski, P.J. Dean, R.B. Zetterstrom, Absorption, Reflectance, and Luminescence of GaN Single Crystals, Phys. Rev. B 3(2) (1971), 497-500.
• Dingle, R., Ilegems, M.: Solid State Commun. 9 (1971) 175.
• Dmitriev, A.V, Oruzheinikov, A.L. Radiative recombination rates in GaN, InN, AlN and their solid solutions.. in III-Nitride, SiC, and Diamond Materials for Electronic Devices. Eds. Gaskill D.K, Brandt C.D. and Nemanich R.J., Material Research Society Symposium Proceedings, Pittsburgh, PA. 423 (1996), 69-73.
• Drory, M.D., J.W. Ager, T. Suski, I. Grzegory, S. Porowski, Hardness and fracture toughness of bulk single crystal gallium nitride, Appl. Phys. Lett. 69(26) (1996), 4044-4046.
• Dziuba, Z., J. Antoszewski, J.M. Dell, L. Faraone, P. Kozodoy, S. Keller, B. Keller, S.P. DenBaars, U.K. Mishra, Magnetic field dependent Hall data analysis of electron transport in modulation-doped AlGaN/GaN heterostructures, J. Appl. Phys. 82(6) (1997), 2996-3002.
• Edgar, J.H. (ed.). Properties, Processing and Applications of Gallium Nitride and Related Semiconductors , EMIS Datareviews Series, N23. INSPEC, London, 1999.
• Ejder, E., Phys. Status Solidi (a) 6 (1971), 445-448.
• Fan, J.W., M.F. Li, T.C. Chong, J.B. Xia, Electronic properties of zinc-blende GaN, AlN, and their alloys Ga_1-xAl_xN J. Appl. Phys. 79(1) (1996), 188-194.
• Gaska, R., J.W. Yang, A. Osinsky, Q. Chen, M.A. Khan, A.O. Orlov, G.L. Snider, M.S. Shur, Electron transport in AlGaN-GaN heterostructures grown on 6H-SiC substrates, Appl. Phys. Lett. 72(6) (1998), 707-709.
• Gaskill, D.K., L.B. Rowland, K. Doverspike, Electrical transport properties of A1N, GaN and AlGaN, in Properties of Group III Nitrides, ed. Edgar J., EMIS Datareviews Series, N11, 1995, 101-116.
• Gil, B. (ed.). Group III Nitride Semiconductor Compounds: Physics and Applications . Series on Semiconductor Science and Technology, 6. Clarendon Press of the Oxford University Press, Oxford, England, 1998.
• Gorczyca, I., A. Svane, N.E. Christensen, Internet J. Nitride Semicond. Res. 2, Article 18 (1997).
• Gotz, W., N.M. Johnson, C. Chen, H. Liu, C. Kuo, W. Imler, Activation energies of Si donors in GaN, Appl. Phys. Lett. 68(22) (1996), 3144 3146.
• Hoist, J., L. Eckey, A. Hoffmann, I. Broser, B. Schottker, D.J. As, D. Schikora, K. Lischka, Mechanisms of optical gain in cubic gallium nitrite, Appl. Phys. Lett. 72(12) (1998), 1439-1441.
• Ilegems, M., Dingle, R., J. Appl. Phys. 44 (1973) 4234.
• Ilegems, M., Montgomery, H.C., J. Phys. Chem. Solids 34 (1972) 885.
• Ilegems, M., J. Cryst. Growth 13/14 (1972) 360.
• Karch, K., Wagner J.M., Bechstedt F., Bechstedt, Ab initio study of structural, dielectric, and dynamical properties of GaN, Phys. Rev. B 57(12) (1998), 7043-7049.
• Kim, J.G, Frenkel A.C., Liu H., Park R.M., Growth by molecular beam epitaxy and electrical characterization of Si-doped zinc blende GaN films deposited on -SiC coated (001) Si substrates, Appl. Phys. Lett. 65(1) (1994), 91-93.
• Kolnik, J., Oguzman I.H., Brennan K.F., Wang R., Ruden P.P., Wang, Y. Electronic transport studies of bulk zincblende and wurtzite phases of GaN based on an ensemble Monte Carlo calculation including a full zone band structure, J. Appl. Phys. 78(2) (1995), 1033-1038.
• Leszczynski, M., T. Suski, H. Teisseyre, P. Perlin, I. Grzegory, J. Jun, S. Porowski, T.D. Moustakas, Thermal expansion of gallium nitride, J. Appl. Phys. 76, 8 (1994), 4909-4911.
• Leszczynski, M., H. Teisseyre, T. Suski, I. Grzegory, M. Bockowski, J. Jun, S. Porowski, K. Pakula, J.M. Baranowski, C.T. Foxon, T.S. Cheng, Lattice parameters of gallium nitride, Appl. Phys. Lett. 69(1) (1996), 73-75.
• Lemos, V., Arguello, C.A., Leite, R.C.C, Solid State Commun. 11 (1972) 1351.
• Lagerstedt, O., Monemar, A., J. Appl. Phys. 45 (1974) 2266.
• Lagerstedt, O., Monemar, A., Variation of lattice parameters in GaN with stoichiometry and doping, Phys. Rev. B 19 (1979) 3064.
• Madelung, O., ed., Semiconductor: group IV elements and III-V compound. Series "Data in science and technology", ed. R.Poerschke, Shpringer -Verlag , Berlin,1991, pp. 164.
• Manchon, D.D., Barker, A.S., Dean, J.P., Zetterstrom, R.B., Solid State Commun. 8 (1970) 1227.
• Martin, G., A. Botchkarev, A. Rockett, H. Morkoc, Valence-band discontinuities of wurtzite GaN, AlN, and InN heterojunctions measured by x-ray photoemission spectroscopy, Appl. Phys. Lett. 68(18) (1996), 2541-2543.
• Maruska, H.P, Tietjen, J.J., Appl. Phys. Lett. 15 (1969) 327.
• Mattila, T., Seitsonen, A.P., Nieminen, R.M., Large atomic displacements associated with the nitrogen antisite in GaN, Phys. Rev. B 54(3) (1996), 1474-1477.
• Mohammad S.N. H.Morkoc, Prog. Quant. Electron. 20 (1996) 361.
• Monemar, B., J.P. Bergman, H. Amano, I. Akasaki, T. Detchprohm, K. Hiramatsu, N. Sawaki, International Symposium on Blue Laser and Light Emiting Diodes, Chiba University, Japan, March 5-7, 1996.
• Monemar, B., Fundamental energy gap of GaN from photoluminescence excitation spectra, Phys. Rev. B 10 (1974) 676.
• Monemar, B., Lagerstedt, O., Gislason, H.P., J. Appl. Phys. 51 (1980) 625.
• Monemar, B., Gislason, H.P., Lagerstedt, O., J. Appl. Phys. 51 (1980) 640.
• Morkoc, H., S. Strite, G.B. Gao, M.E. Lin, B. Sverdlov, M. Burns, Large-band-gap SiC, III-V nitride, and II-VI ZnSe-based semiconductor device technologies, J. Appl. Phys. 76(3) (1994), 1363-1398.
• Morkoc, H. Nitride Semiconductors and Devices , Springer Series in Materials Science, Vol. 32, Springer, Berlin, 1999.
• Moustakas, T.D., Jacques, I.P. (eds.). Gallium Nitride (GaN) I. Semiconductors and Semimetals , Vol. 50, Academic Press, San Diego, 1998.
• Muth, J.F, J.H. Lee, I.K. Shmagin, R.M. Kolbas, H.C. Casey, Jr., B.P. Keller, U.K. Mishra, S.P. DenBaars, Absorption coefficient, energy gap, exciton binding energy, and recombination lifetime of GaN obtained from transmission measurements, Appl. Phys. Lett. 71(18) (1997), 2572-2574.
• Nakamura, S., T. Mukai, M. Senoh, Jpn. J. Appl. Phys. 31 (1992), 2883-2888.
• Nakamura, S., G. Fasol (eds.). The Blue Laser Diode: GaN Based Light Emitters and Lasers , Springer, Berlin, 1997.
• Nakamura, S. Introduction to Nitride Semiconductor Blue Lasers and Light Emitting Diodes , Taylor & Francis, New York, 1999.
• Neugebauer, J., Van de Walle C.G., Atomic geometry and electronic structure of native defects in GaN, Atomic geometry and electronic structure of native defects in GaN, Phys. Rev. B 50(11) (1994), 8067-8070.
• Nikolaev, V., V. Shpeizman, B. Smirnov, The Second Russian Workshop "GaN, InN, and AIN-structures and devices." St Petersburg, St Petersburg Technical University Russia, June 2, 1998.
• Nipko, J.C., C.-K. Loong, C.M. Balkas, R.F. Davis, Phonon density of states of bulk gallium nitride, Appl. Phys. Lett. 73(1) (1998), 34-36.
• Qian W. , Skowronski M., Rohrer G.R.Structural defects and their relationship to nucleation of GaN thin films. in III-Nitride, SiC, and Diamond Materials for Electronic Devices. Eds. Gaskill D.K, Brandt C.D. and Nemanich R.J., Material Research Society Symposium Proceedings, Pittsburgh, PA. 423 (1996), 475-486.
• Oguzman, I.H., E. Bellotti, K.F. Brennan, J. Kolnik, R. Wang, P.P. Ruden, Theory of hole initiated impact ionization in bulk zincblende and wurtzite GaN, J. Appl. Phys. 81(12) (1997), 7827-7834.
• Osinsky, A., M.S. Shur, R. Gaska, Q. Chen, Electron. Lett. 34(7) (1998), 691-692.
• Pankove J.I., Bloom, S., Harbeke, G., RCA Rev., 36 (1975) 163.
• Pankove, J.I., Duffy, M.T., Miller, E.A., Berkeyheiser, J.E., J. Lumin. 8 (1973) 89.
• Pankove, J.I., T.D. Moustakas, R.K. Willardson (eds.). Gallium Nitride (GaN) 11. Semiconductors and Semimetals , Vol. 57, Academic Press, San Diego, 1999.
• Petalas, S., S. Logothetidis, S. Boultadakis, M. Alouani, J.M. Wills, Optical and electronic-structure study of cubic and hexagonal GaN thin films, Phys. Rev. B 52(11) (1995), 8082-8091.
• Polian, A., M. Grimsditch, I. Grzegory, Elastic constants of gallium nitride, J. Appl. Phys. 79(6) (1996), 3343-3344.
• Porowski, S., Mater. Sci. Eng. B 44 (1997), 407-413.
• Ramirez-Flores, G., H. Navarro-Contreras, A. Lastrae-Martinez, R.C. Powell, J.E. Greene, Temperature-dependent optical band gap of the metastable zinc-blende structure beta -GaN, Phys. Rev. B 50(12) (1994), 8433-8438.
• Rheinlander, A., Neumann, H., Phys. Status Solidi (b) 64 (1974) K123.
• Rubin, M., N. Newman, J.S. Chan, T.C. Fu, J.T. Ross, p-type gallium nitride by reactive ion-beam molecular beam epitaxy with ion implantation, diffusion, or coevaporation of Mg, Appl. Phys. Lett. 64(1) (1994), 64-66.
• Savastenko, VA, Sheleg, A.U., Phys. Status Solidi (a) 48 (1978) K135.
• Sheleg, A.U, Savastenko, V.A.,: Vesti Akad. Nauk BSSR, Ser. Fiz. Mat. Nauk 3 (1976) 126.
• Shur, M.S., B. Gelmont, A. Khan, J. Electronic Mater. 25, 777-785 (1996).
• Shur M.S. M.A. Khan, Mat. Res. Bull. 22, 2 (1997) 44.
• Sichel, E.K., Pankove J.I., Phys. Chem. Solids 38, Thermal conductivity of GaN. 25-360 K. J. Phys. Chem. Solids 38, 3 (1977), 330.
• Siegle, H., G. Kaczmarczyk, L. Filippidis, L. Litvinchuk, A. Hoffmann, C. Thornsen, Zone-boundary phonons in hexagonal and cubic GaN, Phys. Rev. B 55, 11 (1997), 7000-7004.
• Strite, S, H. Morkoc, J. Vac. Sci. Technol. B 10, 4 (1992), 1237-1266.
• Suzuki, M, T. Uenoyama, A. Yanase, First-principles calculations of effective-mass parameters of AlN and GaN, Phys. Rev. B 52, 11 (1995), 8132-8139.
• Szweda, R. Gallium Nitride & Related Wide Bandgap Materials & Devices: A Market & Technology Overview 1996-2001 , Elsevier Trends Division, Oxford, 1997.
• Teisseyre H., Perlin P., Suski T., Grzegory I., Porowski S., Jun J., Pietraszko A., Moustakas T.D. Temperature dependence of the energy gap in GaN bulk single crystals and epitaxial layer. J. Appl. Phys. 76, 4 (1994) 2429-2434.
• Truell, R., C. Elbaum, B.B. Chick, Ultrasonic Methods in Solid State Physics, Academic Press, New York, 1969.
• Vavilov, V.S., Makarov, S.I., Chukichev, M.V., Chetverikova, I.F., Sov. Phys. Semicond. 13 (1979) 1259; Fiz. Tekh. Poluprov.(rus) 13 (1979) 2153.
• Wright, A.F., Elastic properties of zinc-blende and wurtzite AlN, GaN, and InN, J. Appl. Phys. 82. 6 (1997), 2833-2839.
• Yu, G., G. Wang, H. Ishikawa, M. Umeno, T. Soga, T. Egawa, J. Watanabe, T. Jimbo, Optical properties of wurtzite structure GaN on sapphire around fundamental absorption edge (0.78-4.77 eV) by spectroscopic ellipsometry and the optical transmission method, Appl. Phys. Lett. 70, 24 (1997), 3209-3211.
• Zi, J., X. Wan, G. Wei, K. Zhang, X. Xie, J. Phys. Condens. Matter 8 (1996), 6323-6328.
• Gallium, Aluminum and Indium Nitrides. 4th International Workshop" September 18-19, 2000 St Petersburg, Russia. Abs., Proc.(pdf 2.1MB, in russian)

 

Statistics