NSM Archive - Gallium Nitride (GaN) - Optical properties
Optical properties
Zinc Blende crystal structure
| Remarks | Referens | ||
| Dielectric constant (static) | 9.7 | 300 K | Bougrov et al. (2001) |
| Dielectric constant (high frequency) | 5.3 | 300 K | |
| Infrared refractive index | ~=2.3 | 300 K | |
| Radiative recombination coefficient | 1.1 x 10-8 cm3 s-1 | 300 K; also see Recombination parameters |
Muth et al. (1997) |
| Optical phonon energy | 87.3 meV | 300 K |
Wurtzite crystal structure
| Remarks | Referens | ||
| Dielectric constant (static) | 8.9 |
300 K | Bougrov et al. (2001) |
| 10.4(3) 9.5(3) |
E||c E  c ; high frequency dielectric
constant assumed to be isotropic |
Barker et al.(1973) |
|
| Dielectric constant (high frequency) | 5.35 |
300 K |
Bougrov et al. (2001) |
| 5.8(4) 5.35(20) |
300 K, E||c 300 K, E c |
Manchon et al.(1970) Barker et al.(1973) |
|
| Refractive index, n | 2.29(5) | 300 K (extrapolated to 0 eV), E cinterference method (the value for E||c is 1.5(2)% lower at 500 nm); also see Energy dependence and long wavelength value |
Ejder (1971) |
| Infrared refractive index | ~=2.3 | 300 K | |
| Radiative recombination coefficient | 1.1 x 10-8 cm3 s-1. | 300 K; also see Recombination parameters |
Muth et al. (1997) |
| Optical phonon energy | 91.2 meV | 300 K | Bougrov et al. (2001) |
| phonon wavenumbers: | Remarks | Referens | |
| νA1(TO||) | 533 cm-1 | T=300K; Raman spectroscopy | Manchon et al.(1970) |
| νE1(TO)
|
559 cm-1 | T=300K; Raman spectroscopy | Lemos et al.(1972) |
| νE1(LO)
|
746 cm-1 | T=300K; Kramers-Kronig analysis of infrared reflectivity |
Barker & Ilegems (1973) |
| νA1(LO) | 744 cm-1 | T=300K; Kramers-Kronig analysis of infrared reflectivity |
Barker & Ilegems (1973) |
Optical properties
 |
GaN, Wurtzite sructure. Refractive index vs. photon energy at
300 K. Ec Ejder (1971). |
 |
GaN, Wurtzite. Refractive index n versus wavelength on sapphire
at 300 K. n2(λ) = 2.272 + 304.72/(λ2 |