NSM Archive - Basic Parameters of Gallium Indium Antimonide (GaInSb)
Basic Parameters at 300 K
| Crystal structure | Zinc Blende |
| Group of symmetry | Td2-F43m |
| Number of atoms in 1 cm3 | (2.94+0.59x)·1022 |
| Density | 5.77-0.16x g·cm-3 |
| Dielectric constant (static) | 16.8-1.1x |
| Dielectric constant (high frequency) | 15.7-1.3x |
| Effective electron mass me | 0.015+0.01x+0.025x2 mo |
| Effective hole masses mh | 0.43-0.03x mo |
| Effective hole masses mlp | 0.015+0.01x+0.025x2 mo |
| Electron affinity | 4.59-0.53x eV |
| Lattice constant | 6.479-0.383x A |