Thermal properties of Gallium Indium Arsenide Antimonide (GaInAsSb)
Thermal properties
Basic parameters
Remarks | Referens | ||
Bulk modulus | 5.7·1011 dyn cm-2 | 300 K; compositions lattice-matched to GaSb | Mikhailova M.P. (1999) |
5.8·1011 dyn cm-2 | 300 K; compositions lattice-matched to InAs. | ||
Debye temperature | ~270 K | 300 K; compositions lattice-matched to GaSb and InAs |
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Density | (5.69-0.08x) g cm-3 | 300 K; compositions lattice-matched to GaSb. see also Mechanical properties |
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Melting point, Tm | ~= 1100° C | ||
Specific heat | ~0.25 J g-1°C -1 | 300K | |
Thermal conductivity | (****) W cm-1 °C -1 |
300K | |
Thermal expansion coefficient, linear | (****) °C -1 | 300K |
Thermal conductivity
Thermal resistivity for several GaInAsSb compositions. 300K.
(Both et al.[1990]).Composition | Eg, eV | Thermal resistivity, cmK/ |
Ga0.94In0.06As0.05Sb0.95 | 0.67 | 5.5 |
Ga0.85In0.15As0.13Sb0.87 | 0.59 | 7.1 |
Ga0.81In0.19As0.16Sb0.83 | 0.56 | 10.4 |
Temperature dependence of thermal conductivity n-GaSb (x=1, y=0). Electron concentration at 300 K n-type sample, no (cm-3): 1. 1.6·1017; 2. 8.6·1017; 3. 1.8·1018; p-type sample. 4. Undoped GaSb po = 1.42·1017(cm-3) (Poujade and Albany [1969]). |
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Temperature dependence of thermal conductivity InAs (x=0, y=1). n-type sample, no (cm-3): 1. 1.6·1016; 2. 2.0·1017; p-type sample, po (cm-3): 3. 2.0·1017. (Tamarin and Shalyt [1971]). |
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Temperature dependence of thermal conductivity GaSb (x=1, y=0)
(for high temperature) (Okhotin et al. [1972]). |
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Temperature dependence of specific heat at constant pressure InAs (x=0, y=1). (Piesbergen[1963]). |
Contours of constant lattice-mismatch as a function of x and y in
GaInAsSb system grown on a GaSb substrate. Ghiti and O'Reilly [1993]. |
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Phase diagram for GaInAsSb at 530 °C. Experimental points: º - concentration of Sb in liquid phase xl Sb, · - xl As, º - xl Ga. Solid phase is lattice matched to GaSb. Guseinov et al.[1989]. |
Solidus isothermes for several GaInAsSb compositions lattice-matched
to GaSb as a function of the Sb concentration in liquid phase xl Sb. Tournie [1990]. |
Lattice properties
Lattice parameters
Remarks | Referens | ||
Lattice constant, a | 6.0959 (GaSb) ÷ 6.0583 (InAs) | 300K | |
For compositions lattice-matched | |||
Lattice constant | 6.0959 A | to GaSb [y=(0.3835-0.3835x)/(0.4210+0.216x)
]; 300 K |
Adachi (1987) |
6.0583 A | to InAs [y=(0.4210-0.3835x)/(0.4210+0.216x)
]; 300 K |