Electrical Properties of Gallium Indium Arsenide Phosphide (GaInAsP)
Electrical properties
Basic ParametersMobility and Hall Effect
Transport Properties in High Electric Fields
Impact Ionization
Recombination Parameters
Recombination Parameter
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Calculated dependences of Auger coefficients R (solid lines) and radiative recombination coefficients B (dashed lines) versus electron-hole concentration for two composition alloys lattice-matched to InP. T=300 K. Δn=Δp. 1, 1´ - y=0.6, 2, 2´ - y=0.24. (Garbuzov et al. (1984)). |
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Calculated dependences of Auger coefficients R (solid lines) and radiative recombination coefficients B (dashed lines) versus versus temperature for two composition alloys lattice-matched to InP. T=300 K. Δn=Δp=2·1018 cm-3 1, 1´ - y=0.6, 2, 2´ - y=0.24. (Garbuzov et al. (1984)). |