Impact Ionization of Gallium Indium Arsenide Phosphide (GaInAsP)
Electrical properties
Basic ParametersMobility and Hall Effect
Transport Properties in High Electric Fields
Impact Ionization
Recombination Parameters
Impact Ionization
Field dependence of electron (αi) and hole (βi) ionization coefficients for Ga0.33In0.67As0.7P0.3. T=300 K. (Osaka et al. (1984)). |
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Field dependence of electron (αi) and hole (βi) ionization coefficients for Ga0.11In0.89As0.74P0.26. T=300 K. (Takanashi and Horikoshi (1979)). |
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Calculated donor concentration for the avalanche-Zener breakdown transition as a function of y for GaInAsP alloys lattice-matched to InP. T=300 K. (Pearsall (1982)). |
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Calculated avalanche breakdown voltage for InP (y=0) and Ga0.47In0.53As (y=1) abrupt p-n junctions. T=300 K. (Pearsall (1982)). |