Impact Ionization of Gallium Indium Arsenide Phosphide (GaInAsP)

GaInAsP - Gallium Indium Arsenide Phosphide

Electrical properties

Basic Parameters
Mobility and Hall Effect
Transport Properties in High Electric Fields
Impact Ionization
Recombination Parameters

Impact Ionization

Field dependence of electron (αi) and hole (βi) ionization coefficients for Ga0.33In0.67As0.7P0.3. T=300 K.
(Osaka et al. (1984)).
Field dependence of electron (αi) and hole (βi) ionization coefficients for Ga0.11In0.89As0.74P0.26. T=300 K.
(Takanashi and Horikoshi (1979)).
Calculated donor concentration for the avalanche-Zener breakdown transition as a function of y for GaInAsP alloys lattice-matched to InP. T=300 K.
(Pearsall (1982)).
Calculated avalanche breakdown voltage for InP (y=0) and Ga0.47In0.53As (y=1) abrupt p-n junctions. T=300 K.
(Pearsall (1982)).