Basic Parameters Gallium Indium Arsenide Phosphide (GaInAsP) - NSM Archive

GaInAsP - Gallium Indium Arsenide Phosphide

Basic Parameters

    Remarks Referens
Crystal structure Zinc Blende  
Group of symmetry Td2-F43m  

To estimate the value of any parameter b of one can use an approximate formula:
b(x,y)~= (1-x)y bInAs +(1-x)(1-y) bInP + xy bGaAs + x(1-y) bGaP
 
 
Adachi (1982)
Number of atoms in 1 cm3 3.96·1022 Ga0.47In0.53AsyP1-y; 300K  
Bulk modulus (7.1-0.516y+0.02y2)·1011 dyn cm-2 Ga0.47In0.53AsyP1-y; 300K Goldberg Yu.A. & N.M. Schmidt (1999)
Debye temperature (425-103y) K Ga0.47In0.53AsyP1-y; 300K  
Density (4.81+0.552y+0.138y2) g cm-3 Ga0.47In0.53AsyP1-y; 300K  
Melting point, Tm ~= 1100° C    
Specific heat (0.31 +0038y -0.008y2) J g-1°C -1 Ga0.47In0.53AsyP1-y; 300K  
Thermal conductivity (0.68-1.77y+1.25y2) W cm-1 °C -1
Ga0.47In0.53AsyP1-y; 300K

Goldberg Yu.A. & N.M. Schmidt (1999)

Thermal expansion coefficient, linear (4.6+1.06y)x10-6 °C -1 Ga0.47In0.53AsyP1-y; 300K  
Dielectric constant (static) 12.5 +1.44y Ga0.47In0.53AsyP1-y; 300 K
Dielectric constant (high frequency) 9.61 +2.0y Ga0.47In0.53AsyP1-y; 300 K  
Infrared refractive index ~=3.1+0.46y Ga0.47In0.53AsyP1-y; 300 K  
Radiative recombination coefficient 1.2 x 10-10 cm3 s-1 (y=0.24)
1.1 x 10-10 cm3 s-1 (y=0.6)
Ga0.47In0.53As0.24P0.76; y=0.24; 300 K
Ga0.47In0.53As0.6P0.4; y=0.6; 300 K
 
Energy gaps composition, Eg 1.35 +0.668x -1.068y +0.758x2 +0.078y2
-0.069xy -0.332x2y +0.03xy2 eV
300 K  
Energy gaps, Eg
(1.344-0.738y+0.138y2) eV Ga0.47In0.53AsyP1-y; 300 K  
Effective electron mass   me 0.08-0.05y+0.017y2 mo~=
~=0.08-0.039y mo
Ga0.47In0.53AsyP1-y; 300K
for alloys lattice-matched to InP
Goldberg Yu.A. & N.M. Schmidt (1999)
Effective hole masses (heavy) mh mh ~= (0.6 -0.18y) mo Ga0.47In0.53AsyP1-y; 300K  
Effective hole masses (light) mlp mlp ~= (0.12 -0.099y +0.03y 2) mo
Ga0.47In0.53AsyP1-y; 300K  
Effective hole masses (split-off band) ms mso ~= (0.21 -0.01y -0.05y 2) mo Ga0.47In0.53AsyP1-y; 300K  
Lattice constant 5.8687 A Ga0.47In0.53AsyP1-y; 300K
see also Lattice properties
Goldberg Yu.A. & N.M. Schmidt (1999)
Auger recombination coefficient
1.1 x 10-31 cm6/s (y=0.24)
2.9 x 10-30 cm6/s (y=0.6)
Ga0.47In0.53As0.24P0.76; y=0.24; 300 K
Ga0.47In0.53As0.6P0.4; y=0.6; 300 K