Physical properties of Gallium Indium Arsenide Phosphide (GaInAsP)

GaInAsP - Gallium Indium Arsenide Phosphide

Basic Parameters at 300 K
Band structure and carrier concentration
Basic Parameters
Band Structure
Intrinsic carrier concentration
Lasing wavelength
Effective Density of States in the Conduction and Valence Band
Temperature Dependences
Dependence on Hydrostatic Pressure
Band Discontinuities at Heterointerfaces
Effective Masses and Density of States
Donors and Acceptors
Electrical Properties
Basic Parameters of Electrical Properties
Mobility and Hall Effect
Transport Properties in High Electric Fields
Impact Ionization
Recombination Parameters
Optical properties
Thermal properties
Basic parameters
Thermal conductivity
Lattice properties
Mechanical properties
Basic Parameters
Elastic Constants
Micro Hardness
Acoustic Wave Speeds
Phonon Frequencies
Piezoelectric, Thermoelectic and Magnetic Properties
References