Optical Properties of Gallium Arsenide Antimonide (GaAsSb)

GaAsSb - Gallium Arsenide Antimonide

Optical properties

Infrared refractive index (300 K)
n=3.3+05x+0.09x2

Refractive index n versus photon energy. 300 K
1. x=0 (GaAs),
2. x=1 (GaSb)
(Adachi (1989)).
Normal incidence reflectivity versus photon energy. 300 K.
1. x=0 (GaAs),
2. x=1 (GaSb)
(Aspnes and Studna (1983)).
Wavenumber dependence of the reflectance for four alloy compositions. 300 K.
1. x=0.07, 2. x=0.09,
3. x=0.89, 4. x=0.93
(Lucovsky and Chen (1970)).
The absorption coefficient versus photon energy. 300 K.
1. x=0 (GaAs),
2. x=1 (GaSb)
(Adachi (1989)).
Intrinsic absorption coefficient near the intrinsic absorption edge for x=0 (GaAs).
(Sturge (1962)).
Intrinsic absorption coefficient near the intrinsic absorption edge for x=1 (GaSb).
T(K): 1. 300, 2. 77, 3. 4.2.
(Becker et al. (1961)).
Absorption edge at different temperatures for x=0.1
(Swarup et al. (1981)).