Basic Parameters of of Gallium Arsenide Antimonide (GaAsSb)
Basic Parameters at 300 K
| Crystal structure | Zinc Blende |
| Group of symmetry | Td2-F43m |
| Number of atoms in 1 cm3 | (4.42-0.89x)·1022 |
| Density | (5.32 + 0.29x) g cm-3 |
| Dielectric constant (static ) | 12.90 + 2.8x |
| Dielectric constant (high frequency) | 10.89 + 3.51x |
| Effective electron mass me | 0.063 - 0.0495x + 0.0258x2 mo |
| Effective hole masses mh | 0.51 - 0.11x mo |
| Effective hole masses ml | 0.082 - 0.032x mo |
| Electron affinity | 4.07 eV |