NSM Archive - Aluminium Nitride (AlN) - Optical properties

AlN - Inllium Nitride

Optical properties


    Remarks Referens
Dielectric constant (static) 9.14 300 K, reflectivity Collins et al. (1967)
8.5 300 K Goldberg (2001)
Dielectric constant (high frequency) 4.84
4.6
300 K, reflectivity
300 K
Collins et al. (1967)
Goldberg (2001)
Infrared refractive index 2.1 - 2.2 300 K, Epitaxial films and monocrystals Meng, (1994)
1.9 - 2.1 300 K, Polycrystalline films  
1.8 - 1.9 300 K, Amorphous films  
Radiative recombination coefficient
0.4 x 10-10 cm-1 s-1 300 K Walker et al. (1997)
Optical phonon energy 99 meV 300 K  
phonon wavenumbers:   Remarks Referens
νTO(E1) 895(2) cm-1
RT. Raman scattering Sanjurjo et al. (1983)
νLO(E1) 671.6(8) cm-1    
νTO(A1) 888(2) cm-1    
νLO(A1) 659.3(6) cm-1    
ν(E2) 303 cm-1 Raman scattering, tentative assignment Carlone, et al. (1984)
ν(E2) 426 cm-1    
νTO(A1) 514 cm-1    
νTO(E1) 614 cm-1    
νLO(A1) 663 cm-1    
νLO(E1) 821 cm-1    

Optical properties

AlN, Wurtzite. Refractive index n vs. wavelength. 300 K
1 -- Geidur & Yaskov (1980);
2-3 -- Demiryont et al. (1986)
AlN, Wurtzite. Normal incidence reflectivity versus photon energy. Ultraviolet region.
Loughin and French (1994)
AlN, Wurtzite. Normal incidence reflectivity versus wavelength. Infrared region.
Circles are experimental values,
solid line is calculated.
Akasaki & Hashimoto (1967)
AlN, Wurtzite. The absorption coefficient squared versus photon energy near the intrinsic absorption edge for 300 K and 5 K.
The values of 6.2 and 6.28 eV resulting from a straight-line fit are shown
Perry & Rutz (1978)
AlN, Wurtzite. The absorption coefficient versus photon energy at 300 K.
Demiryont et al. (1986)
AlN, Wurtzite. The absorption coefficient versus photon energy at 300 K for sputter-deposited microcrystalline AlN grown on fused silica.
Aita et al. (1989); see also Zarwasch et al. (1992)