NSM Archive - Aluminium Gallium Arsenide (AlGaAs) - Reference
References:
- Goldberg Yu.A. Handbook Series on Semiconductor Parameters, vol.2, M. Levinshtein, S. Rumyantsev and M. Shur, ed., World Scientific, London, 1999, pp. 1-36.
- S.Adachi, J. Appl. Phys., 58, no.3, pp.R1-R29 (1985).
- M.A.Afromowitz, J. Appl. Phys., 44, no.3, pp.1292-1294 (1973).
- D.E.Aspnes, Phys. Rev., B14, no.12, pp.5331-5343 (1976).
- D.E.Aspnes, S.M.Kelso, R.A.Logan, R.Bhat., J.Appl.Phys., 60, no.2, pp.754-767 (1986).
- I. Barin, O. Knacke, O. Kubaschewski, Thermochemical Properties of Inorganic Substances, Springer, Berlin-Heidelberg-New York, 1977.
- K. Brennan, K. Hess, J. Appl. Phys., 59, no.3, pp.964-966 (1986).
- T. J. Drummond, W. Kopp, R. Fischer, H. Morkoc, J. Appl. Phys., 53, no.2, pp.1028-1029 (1982).
- M. Ettenberg, R. J. Paff, J. Appl. Phys., 41, no.10, pp.3926-3927 (1970).
- M.A. Haase, M.A. Emanuel, S.C. Smith, J.J. Coleman, and G.E. Stillman, Appl. Phys. Lett., 50, no.7, pp.404-406 (1987).
- J.J. Harris, C.T. Foxon, K.W.J. Barhkam, D.E. Lacklison, J. Hewett, C. White, J. Appl. Phys., 61, no.3, pp.1219-1221 (1987)
- S. Hava, M. Auslender, J. Appl. Phys., 73, no.11, pp.7431-7434 (1993).
- R. Heilman, G. Oelgart, Semicond. Sci. Technol., 5, no 10, pp.1040-1045 (1990).
- G. Hill, and P.N.Robson, J.de Physique, 42, Colloque no.7, Suppl. au no.10, pp.C7-335 - C7-341 (1981).
- J.H. Hur, C.W. Myles, M.A. Gundersen, J. Appl. Phys., 67, no.11, pp.6917-6923 (1990).
- S.C.Jain, J.M.McGregor, D.J.Roulston, J. Appl. Phys., 68, no.7, pp.3747-3749 (1990).
- S.C.Jain, and D.J.Roulston, Solid State Electron, 34, no.5, pp.453-465 (1991).
- D.W.Jenkins, J. Appl. Phys., 68, no.4, pp.1848-1853 (1990).
- K.Kaneko, M.Ayabe, and N.Watanabe, in GaAs and Related Compounds (Inst.of Phys., London, Ser . 33a, 1977), pp.216-226.
- J.M.Langer, H.Heinrich, Physica B, 134 no.1-3, pp.444-450 (1985).
- B.D.Lichter and P.Sommelet, Trans. Metall. Soc., AIME, 245, pp.1021-1027 (1969).
- D.Lippens, O.Vanbesien, in GaAs and Related Compounds (Inst.of Phys., Bristol and Philadelphia, Ser. 91, 1987), pp.757-760.
- W.C.Liu, J. Material Sci., 25, no.3, pp.1765-1772 (1990).
- D.C.Look, D.K.Lorance, J.R.Sizelove, C.E.Stutz, K.R.Evans, D.W.Whitson, J. Appl. Phys., 71, no.1, pp.260-266 (1992).
- W.T.Masselink, Semicond. Sci. Technol., 4, no.7, pp.503-512 (1989).
- W.T.Masselink,N.Braslau, D.LaTulipe, W.I.Wang, S.L.Wright, in GaAs and Related Compounds (Inst. of Phys.,Bristol and Philadephia, Ser. 91, 1987), pp.665-668.
- B.Monemar, K.K. Shih, and G.D.Pettit, J. Appl. Phys., 47, no.6, pp.2604-2613 (1976).
- M.de Murcia, D.Gasquet, E.Richard, P.Wolff, J.Zimmermann, J.Vanbremeersch, AIP Conf. Proc. 285 (Noise in Physical Systems and 1/f fluctuations, St.Louis, USA, 1993), pp.27-30 .
- L. Pavesi, M.Guzzi, J. Appl. Phys., 75, no.10, pp.4779-4842 (1994).
- P.J.Pearah, W.T.Masselink, J.Klem, T.Henderson, H.Morcoc, C.W.Litton, D.C.Reynolds, Phys.Rev., B32, no.6, pp.3857-3862 (1985).
- L.Pfeiffer, K.W.West, H.L.Stormer, K.W.Baldwin, Appl. Phys. Lett., 55, no.18, pp.1888-1890 (1989).
- A.N.Pikhtin, A.D.Yas'kov, Sov.Phys.Semicond., 14, no.4, pp.389-392 (1980).
- V.M.Robbins, S.C.Smith, G.E.Stillman, Appl. Phys. Lett, 52, no.4, pp.296-298 (1988).
- A.K. Saxena, J. Phys. C., 13, no.23, pp. 4323-4334 (1980).
- A. K. Saxena, Solid St. Comm., 39, no.7, pp. 839-842 (1981).
- A.K.Saxena, Phys. Rev., B24, no.6, pp. 3295-3302 (1981).
- M.Shur, Physics of Semiconductor Devices, Prentice Hall, 1990.
- A.J. Spring Thorpe, T.D. King, A.J. Beck, J. Electron. Mater., 4, no.1, pp. 101-118 (1975).
- G.E.Stillman, C.M. Wolfe, and J.O. Dimmock, J. Phys. Chem. Solids, 31, no. 6, pp. 1199-1204 (1970).
- M.Takeshima, J. Appl. Phys., 58, no.10, p.3846 (1985)
- M.L. Timmons, J.A. Hutchby, R.K. Ahrenkiel, D.J. Dunlavy, in GaAs and Related Compounds (Inst. of Phys., Bristol and Philadelphia, Ser. 96, 1988), pp. 289-294.
- W.Walukiewicz, J. Appl. Phys., 59, no.10, pp.3577-3579 (1986).
- Z.Wilamowski, J.Kossut, W.Jantsch, and G.Ostermayer, Semicond.Sci.Technol., 6, no.10B, pp.B38-B46 (1991).
- J.J.Yang, W.I.Simpson, L.A.Moudy, in GaAs and Related Compounds (Inst. of Phys., Bristol and London, Ser.63, 1981), pp.107-112.
- J.J.Yang, L.A.Moudy , W.I.Simpson, Appl. Phys. Lett., 40, no. 3, pp.244-246 (1982).
- H.A.Zarem, J.A.Lebens, K.B.Nordstrom, P.C.Sercel, S.Sanders, L.E.Eng, A.Yariv, K.J.Vahala, Appl.Phys.Lett., 55, no. 25, pp.2622-2624 (1989).